Features: ·Excellent Transmit Output Stage·Temperature Compensated Output Detector·On-Chip ESD Protection·20.0 dB Small Signal Gain·+28.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd...
P1022-BD: Features: ·Excellent Transmit Output Stage·Temperature Compensated Output Detector·On-Chip ESD Protection·20.0 dB Small Signal Gain·+28.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output P...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id1,2,3) | 145, 290, 580 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +19.0 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Graph 1 |
Junction Temperature (Tch) | MTTF Graph 1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's three stage 17.0-25.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 20.0 dB with a +28.0 dBm P1dB output compression point across the band. The P1022-BD also includes an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1022-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. ThisP1022-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.