P1021-BD Selling Leads, Price trend, P1021-BD DataSheet download, circuit diagram from SeekIC.com

Features: ·Excellent Saturated Output Stage·22.0 dB Small Signal Gain·+27.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +9.0 VDC Supply Current (Id) 500 mA Gate Bias Voltag...

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SeekIC No. : 004438969 Detail

P1021-BD: Features: ·Excellent Saturated Output Stage·22.0 dB Small Signal Gain·+27.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010...

P1021-BD Data Sheet

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Part Number:: P1021-BD
Supply Ability:: 5000

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Upload time: 2024/11/25

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Product Details

Description

Features:

·Excellent Saturated Output Stage
·22.0 dB Small Signal Gain
·+27.0 dBm Saturated Output Power
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883 Method 2010

Specifications

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Supply Voltage (Vd)	+9.0 VDC
Supply Current (Id)	500 mA
Gate Bias Voltage (Vg)	+0.3 VDC
Input Power (Pin)	+17.0 dBm
Storage Temperature (Tstg)	-65 to +165 ^OC
Operating Temperature (Ta)	-55 to MTTF Table ¹
Junction Temperature (Tch)	MTTF Table ¹

(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.

Description

Mimix Broadband's three stage 17.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with a +27.0 dBm saturated output power. This P1021-BD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1021-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This P1021-BD device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

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P1021-BD

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