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P1020-QE

Features: ·17.0 dB Small Signal Gain·+27.0 dBm Saturated Output Power·SMD, 3x3 mm QFN Package·RoHS Compliant·100% RF, DC and Output Power TestingSpecifications Supply Voltage (Vd) +9.0 VDC Supply Current (Id1,2,3) 500 mA Gate Bias Voltage (Vg) +0.3 VDC Input Power (Pin) +17.0 dBm...

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SeekIC No. : 004438968 Detail

P1020-QE: Features: ·17.0 dB Small Signal Gain·+27.0 dBm Saturated Output Power·SMD, 3x3 mm QFN Package·RoHS Compliant·100% RF, DC and Output Power TestingSpecifications Supply Voltage (Vd) +9.0 VDC ...

P1020-QE Data Sheet

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Part Number:
P1020-QE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·17.0 dB Small Signal Gain
·+27.0 dBm Saturated Output Power
·SMD, 3x3 mm QFN Package
·RoHS Compliant
·100% RF, DC and Output Power Testing


Specifications

Supply Voltage (Vd) +9.0 VDC
Supply Current (Id1,2,3) 500 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (Pin) +17.0 dBm
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table 1
Junction Temperature (Tch) MTTF Table 1


(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's two stage 11.0-19.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with a +27.0 dBm saturated output power. This P1020-QE MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1020-QE device comes in a 3x3mm QFN Surface Mount Package offering excellent RF and thermal properties and is RoHS compliant. This P1020-QE device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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