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P02221B2P

Features: ·1.8 to 2.5GHz Frequency Band·+26.5dBm Output Power·+43dBm Output IP3·+5V Single Supply Voltage·14dB Gain at 2.14GHz·Highly Reliable InGaP HBT·Pb-free SOT-89 SMT Package·AuSn Die Attach for Low and Stable Thermal ResistanceApplication·Wireless communication system·Cellular, PCS, PHS, W-C...

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SeekIC No. : 004438897 Detail

P02221B2P: Features: ·1.8 to 2.5GHz Frequency Band·+26.5dBm Output Power·+43dBm Output IP3·+5V Single Supply Voltage·14dB Gain at 2.14GHz·Highly Reliable InGaP HBT·Pb-free SOT-89 SMT Package·AuSn Die Attach fo...

P02221B2P Data Sheet

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Part Number:
P02221B2P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

·1.8 to 2.5GHz Frequency Band
·+26.5dBm Output Power
·+43dBm Output IP3
·+5V Single Supply Voltage
·14dB Gain at 2.14GHz
·Highly Reliable InGaP HBT
·Pb-free SOT-89 SMT Package
·AuSn Die Attach for Low and Stable Thermal Resistance


Application

·Wireless communication system
·Cellular, PCS, PHS, W-CDMA, WLAN


Specifications

Parameter Symbol Value Units
Device Voltage Vd 6 V
Device Current Id 500 mA
RF Input Power
(continuous)		 Pin 15 dBm
Power Dissipation Pt 2 W
Junction Temperature Tj +150
Storage Temperature Tstg - 40 to +150
Tc: Case Temperature. Operating the device beyond any of these values may cause permanent damage.


Description

P02221B2P is a high performance InGaP/GaAs HBT amplifier housed in a low-cost SOT-89 package. The hetero-junction epitaxial structure has been designed to achieve low distortion, which leads to high IP3. The P02221B2P needs only a +5V single power supply voltage in operation. Utilization of AuSn die attach has realized a low and stable thermal resistance.




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