OTC1015

OTC1015 is a kind of NPN power darlington die.

Here you can get some information about the features ofg OTC1015.First is monolithic planar die.The second is about the contact metallization.The base and emitter is aluminum and the collector is titanium,nickel,silver.The last one is about the dimensions.The die size is 0.220*0.185*0.010 inch;the emitter bond area (E) is 0.143*0.018 inch;the base driver bond area (B₁) is 0.065*0.025 inch and the base driver bond area (B₂) is 0.051*0.020 inch.

What comes next is about the electrical characteristics of OTC1015 at 25.The minimum BV_CEO (collector emitter) is 400 V at I_C=2 A,I_B=100 mA,L=1 mH which is verified on assembled devices.The minimum BV_CEO (collector emitter) is 400 V at I_C=30 mA.The maximum I_CEO (collector emitter cutoff) is 1.0 mA at V_CE=Rated Value.The maximum I_EBO (emitter base cutoff) is 60 mA at V_EB=2 V.The minimum V_EBO (emitter base voltage) is 7 V at I_EB=180 mA.The minimum h_FE1 (DC current gain) is 75 at I_C=1 A,V_C=5 V.The minimum h_FE2 (DC current gain) is 300 and the maximum is 1000 at I_C=5 A,V_C=5 V.The minimum h_FE3 (DC current gain) is 150 at I_C=10 A,V_C=5 V.The maximum V_CE(sat) (collector saturation) is 1.5 V at I_C=10 A,I_B=0.5 A.The maximum V_CE(sat) (collector saturation) is 2.5 V at I_C=20 A,I_B=1 A.The maximum V_BE(sat) (emitter base saturation) is 2.5 V at I_C=10 A,I_B=0.5 A.The maximum t_on (turn-on time) is 0.4s,the maximum t_s (storage time) is 2.0s and the maximum t_f (fall time) is 0.4s at V_CC=300 V,I_C=10 A,I_B1=0.5 A,V_BE(Off)=-5 V,t_p=50s.The minimum C_OB (output capacitance) is 150 pF and the maximum is 350 pF at V_C=10 V,f=1 mHz.