OSD15-0

The OSD15-0 is designed as silicon photodetectors which is designed for operation at a reverse bias voltage of up to 30V for applications where low capacitance or fast speed of response are important. Although these detectors OSD15-0 are tailored for maximum responsivity in the 780 to 950 nm range they may be successfully used for pulsed applications throughout the spectral range from 430 to 1064nm.

Some absolute maximum ratings of OSD15-0 have been concluded into several points as follow. The first one is about its DC reverse voltage which would be 50V. The second one is about its peak pulse current (1uS, 1% duty cycle) which would be 200mA. The third one is about its peak DC current which would be 10mA. The fourth one is about its storage temperature range which would be from -45°C to +100°C. The fifth one is about its operating temperature range which would be from -25°C to +75°C. The sixth one is about its soldering temperature for 5 seconds max which would be 200°C.

Also some electrical specifications of OSD15-0 (characteristics measured at 22°C ambient, and a reverse bias of 30 volts, unless otherwise stated) have been concluded into several points as follow. The first one is about its active area which would be 15mm2 and 3.8 x 3.8. The second one is about its responsivity which would be min 0.47A/W and typ 0.54A/W. The third one is about its dark current which would be max 100nA and typ 20nA. The fourth one is about its NEP WHz-1/2 which would be typ 3.2 x 10^-13. The fifth one is about its capacitance which would be 150pF at Vr=0V and would be 20pF at Vr=30V. The sixth one is about its risetime which would be typ 9ns. The seventh one is about its package which would be 3. It should be noted that recommended operating voltage range would be from 0 to 30V, for all series 0 detectors. And so on. If you have any question or suggestion or want to know more information please contact us.