Features: SpecificationsDescriptionThe OSD1-3T is designed as photosetectors which are specifically designed for high speed intra-red laser pulse detection. The detector structure which is designed to achieve full depletion at 60V reverse bias, makes use of ultra high resistivity silicon to achiev...
OSD1-3T: Features: SpecificationsDescriptionThe OSD1-3T is designed as photosetectors which are specifically designed for high speed intra-red laser pulse detection. The detector structure which is designed ...
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The OSD1-3T is designed as photosetectors which are specifically designed for high speed intra-red laser pulse detection. The detector structure which is designed to achieve full depletion at 60V reverse bias, makes use of ultra high resistivity silicon to achieve a very low capacitance. The detectors OSD1-3T offer an extremely high responsivity in the range 800 to 1000nm and are also idealy suited to longer wavelength pulsed applications where the speed of response is more important than the maximum absolute responsivity.
Some absolute maximum ratings of OSD1-3T have been concluded into several points as follow. The first one is about its DC reverse voltage which would be 70V. The second one is about its peak pulse current (1uS, 1% duty cycle) which would be 200mA. The third one is about its peak DC current which would be 10mA. The fourth one is about its storage temperature range which would be from -45°C to +100°C. The fifth one is about its operating temperature range which would be from -25°C to +75°C. The sixth one is about its soldering temperature for 5 seconds max which would be 200°C.
Also some electrical specifications of OSD1-3T (characteristics measured at 22°C ambient, and a reverse bias of 180 volts, unless otherwise stated) have been concluded into several points as follow. The first one is about its active area which would be 1mm2 and 1.13mm dia. The second one is about its responsivity which would be min 0.54A/W and typ 0.61A/W. The third one is about its dark current which would be max 200nA and typ 4nA. The fourth one is about its NEP WHz-1/2 which would be typ 1.2 x 10^-13. The fifth one is about its capacitance which would be 7pF at Vr=0V and would be 1.5pF at Vr=60V. The sixth one is about its risetime which would be typ 12ns. The seventh one is about its package which would be 1. It should be noted that recommended operating voltage range would be from 0 to 60V, for all series 3T detectors. And so on. If you have any question or suggestion or want to know more information please contact us.