OSD1-3

The OSD1-3 is designed as silicon photosetectors which are specifically designed for high speed and maximum responsivity in the near infra-red region. OSD1-3 are particularly suited to high speed pulsed applications in the region of 900nm and for applications where the low capacitance obtained at 100 volts reverse bias is advantageous.

Some absolute maximum ratings of OSD1-3 have been concluded into several points as follow. The first one is about its DC reverse voltage which would be 120V. The second one is about its peak pulse current (1uS, 1% duty cycle) which would be 200mA. The third one is about its peak DC current which would be 10mA. The fourth one is about its storage temperature range which would be from -45°C to +100°C. The fifth one is about its operating temperature range which would be from -25°C to +75°C. The sixth one is about its soldering temperature for 5 seconds max which would be 200°C.

Also some electrical specifications of OSD1-3 (characteristics measured at 22°C ambient, and a reverse bias of 100 volts, unless otherwise stated) have been concluded into several points as follow. The first one is about its active area which would be 1mm2 and 1.13mm dia. The second one is about its responsivity which would be min 0.54A/W and typ 0.57A/W. The third one is about its dark current which would be max 0.2uA and typ 0.02uA. The fourth one is about its NEP WHz-1/2 which would be typ 2.8 x 10^-13. The fifth one is about its capacitance which would be 12pF at Vr=0V and would be 3pF at Vr=100V. The sixth one is about its risetime which would be typ 6ns. The seventh one is about its package which would be 1. It should be noted that recommended operating voltage range would be from 0 to 100V, for all series 3 detectors. And so on. If you have any question or suggestion or want to know more information please contact us.