OPS665

The OPS665 consists of a gallium arsenide infrared emitting diode (0P165) and an NPN silicon phototransistor (0P505) mounted in matched plastic T-1 packages. Matched pairs are desirable where the application is unique and the quantity required does not justify assembly tooling costs.

Features of the OPS665 are:(1)T-1 package style; (2)high current transfer ratio; (3)low cost plastic package; (4)three current range selections.The units are offered in three different sensitivity ranges to give the designer more flexibility. If separation between the LED and sensor is greater than two times the specified Ic(ON) distance, proper alignment becomes critical. It should be remembered that the sensor is sensitive to ambient light. Although sold as pairs, emitters are packaged separately from sensors for ease of handling.

The absolute maximum ratings of the OPS665 can be summarized as:(1)collector-emitter voltage:30 V;(2)storage temperature range:-40 to 100;(3)soldering temperature:260;(4)operating temperature:-40 to 100;(5)power dissipation:100mW.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

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