OPB861N51

Series: -
Sensing Method: Transmissive
Output Configuration: Phototransistor
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - DC Forward (If): 50mA
Packaging: Bulk
Sensing Distance: 0.125" (3.18mm)
Mounting Type: Chassis Mount
Package / Case: Module, Pre-Wired
Manufacturer: TT Electronics/Optek Technology
Response Time: -


Description

The OPB861N51 is one member of the OPB861N series.The OPB861 N series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .125" (3.18 mm) gap. A unique housing design provides a smooth external surface to prevent dust build-up while molded internal apertures give precise positioning and also provide protection from ambient light interference.

Features of the OPB861N51 are:(1)fully enclosed design allows dust and ambient light protection; (2)lead spacing at .320"; (3).050" and .010" aperture options; (4)PCB mountable.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

The absolute maximum ratings of the OPB861N51 can be summarized as:(1)collector-emitter voltage:30V;(2)emitter-collector voltage:5.0V;(3)reverse voltage:5.0V;(4)storage temperature:-40 to 85;(5)operating temperature:-40 to 85;(6)power dissipation:100mW.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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Parameters:

Technical/Catalog Information	OPB861N51
Vendor	TT Electronics/Optek Technology
Category	Sensors, Transducers
Sensing Distance	0.125" (3.18mm)
Sensing Method	Transmissive
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	30mA
Current - DC Forward (If)	50mA
Output Configuration	Phototransistor
Response Time	-
Type	Unamplified
Mounting Type	Chassis Mount, Wire Lead
Package / Case	Pre-Leaded
Packaging	Bulk
Operating Temperature	-40°C ~ 85°C
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	OPB861N51 OPB861N51 OPB861N51TT ND OPB861N51TTND OPB861N51TT