DescriptionThe OPB823A and OPB824A each utilae an OP140 or OP240 type LED and an OP550 family sensor. The OPB823A end OPB824A each consist of en infrared emitting diode and an NPN silicon phototransistor mounted in a low cost bkck plastic housing an opposfte sides of a 0.125 13.18 mml wide slot. ...
OPB823A: DescriptionThe OPB823A and OPB824A each utilae an OP140 or OP240 type LED and an OP550 family sensor. The OPB823A end OPB824A each consist of en infrared emitting diode and an NPN silicon phototrans...
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The OPB823A and OPB824A each utilae an OP140 or OP240 type LED and an OP550 family sensor. The OPB823A end OPB824A each consist of en infrared emitting diode and an NPN silicon phototransistor mounted in a low cost bkck plastic housing an opposfte sides of a 0.125" 13.18 mml wide slot. Phototransistor switching takes place whenever an opaque object passes through the slot. 18" (457.2mm) minimum length lead wires ease assembly where PC board mounting is not practical.
The features of OPB823A can be summarized as (1)non-contact switching; (2)lead wires for electrical connection; (3)fast switching speed.
The absolute maximum ratings of OPB823A are (1)storage and operating temperature: -40 to +85°C; (2)lead soldering temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron]: 240°C(RMA flux is recommended. Duration can be extended to 10 sec. max when flow soldering.); (3)forward DC current: 50 mA; (4)peak forward current (1 s pulse width, 300 pps): 3.0 A; (5)reverse DC voltage: 2.0V; (6)power dissipation: 100 mW(2: Derate linearly 1.33mW/°C above 25°C); (7)collector-emitter voltage: 30V; (8)emitter-collector voltage: 5.0V; (9)power dissipation: 100mW(3: derate linearly 1.33mW/°C above 25°C).