SENS OPTO SLOT 2.03MM TRANS C-MT
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Series: | - | Manufacturer: | TT Electronics/Optek Technology | ||
Sensing Distance: | 0.080" (2.03mm) | Sensing Method: | Transmissive | ||
Output Configuration: | Phototransistor | Package / Case : | HVQFN EP | ||
Current - DC Forward (If): | 50mA | Current - Collector (Ic) (Max): | - | ||
Voltage - Collector Emitter Breakdown (Max): | 30V | Response Time: | - | ||
Mounting Type: | Chassis Mount | Package / Case: | Module, Pre-Wired |
The OPB821 series(including -S10, -S5, -S3) each consist of an infrared emitting diode and an NPN silicon phototransistor mounted in a low cost black plastic housing on opposite sides of a 0.080" (2.03 mm) wide slot. A minimum of 4.5" (114.3 mm) lead wires ease assembly where PC board mounting is not practical. Available with PC board mountable leads as OPB820 series. Phototransistor switching takes place whenever an opaque object passes through the slot. All assemblies have 0.040" (1.02 mm) wide apertures located in front of the infrared diode. For phototransistor side aperture size, see chart below.
The features of OPB821 can be summarized as (1)three standard aperture sizes for high resolution; (2)low profile, 0.080" (2.03 mm) wide slot; (3)4.5" min, 26 AWG wire leads; (4)TX-TXV process available (see Hi-Rel section).
The absolute maximum ratings of OPB821 are (1)storage and operating temperature: -40 to +80°C; (2)lead soldering temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron]: 240°C(RMA flux is recommended. Duration can be extended to 10 sec. max when flow soldering.); (3)continuous forward current: 50 mA; (4)peak forward current (1 s pulse width, 300 pps): 3.0 A; (5)reverse voltage: 2.0V; (6)power dissipation: 100 mW(2: Derate linearly 1.82mW/°C above 25°C); (7)collector-emitter voltage: 30V; (8)emitter-collector voltage: 5.0V; (9)power dissipation: 100mW(2: derate linearly 1.82mW/°C above 25°C).
Technical/Catalog Information | OPB821 |
Vendor | TT Electronics/Optek Technology |
Category | Sensors, Transducers |
Sensing Distance | 0.080" (2.03mm) |
Sensing Method | Transmissive |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | - |
Current - DC Forward (If) | 50mA |
Output Configuration | Phototransistor |
Response Time | - |
Type | Unamplified |
Mounting Type | Chassis Mount, Wire Lead |
Package / Case | Pre-Leaded |
Packaging | Bulk |
Operating Temperature | -40°C ~ 85°C |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | OPB821 OPB821 |