OPB817

Optical Switches, Transmissive, with Phototransistor Output Slotted Opt Switch

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OPB817 Picture
SeekIC No. : 0086478 Detail

OPB817: Optical Switches, Transmissive, with Phototransistor Output Slotted Opt Switch

floor Price/Ceiling Price

US $ 2.53~2.71 / Piece | Get Latest Price
Part Number:
OPB817
Mfg:
Optek
Supply Ability:
5000

Price Break

  • Qty
  • 0~115
  • 115~250
  • 250~500
  • Unit Price
  • $2.71
  • $2.63
  • $2.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description

Series: -
Sensing Method: Transmissive
Output Configuration: Phototransistor
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - DC Forward (If): 50mA
Packaging: Bulk
Sensing Distance: 0.200" (5.08mm)
Mounting Type: Chassis Mount
Package / Case: Module, Pre-Wired
Manufacturer: TT Electronics/Optek Technology
Response Time: -


Features:

`20" (5.08 mm) wide gap
`24" minimum, 26 AWG wire leads
`Dust protection
`.86" (21.8 mm) deep slot



Specifications

Stor age and Op er ating Tem per a ture Range . . . . . . . . . . . . . . . . -40 to +80
Input Di ode
For ward DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur rent (1 ms pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . 3.0 A
Re verse DC Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1)
Output Phototransistor
Col lec tor-Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 V
Emit ter-Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 mW(1)


NOTES:
(1) De rate lin early 1.67 mW/ above 25.
(2) All pa ram e ters tested us ing pulse tech nique.
(3) Clear dust pro tection.




Description

The OPB817 consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. The extended deep slot of OPB817 allows for a longer reach of the optical center line from the mounting plane, .90" (22.86 mm).

Internal apertures are .010" x 0.06" for the phototransistor "S side" and .050" x .06" for the LED "E side".Custom electrical, wire or cabling is available. Contact your local representative or Optek for more information.




Parameters:

Technical/Catalog InformationOPB817
VendorTT Electronics/Optek Technology
CategorySensors, Transducers
Sensing Distance0.200" (5.08mm)
Sensing MethodTransmissive
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)30mA
Current - DC Forward (If)50mA
Output ConfigurationPhototransistor
Response Time-
TypeUnamplified
Mounting TypeChassis Mount, Wire Lead
Package / CasePre-Leaded
PackagingBulk
Operating Temperature-40°C ~ 80°C
RoHS StatusRoHS Non-Compliant
Other Names OPB817
OPB817
365 1018 ND
3651018ND
365-1018



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