OPB816

Series: -
Sensing Method: Transmissive
Output Configuration: Phototransistor
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - DC Forward (If): 50mA
Packaging: Bulk
Sensing Distance: 0.200" (5.08mm)
Mounting Type: Chassis Mount
Package / Case: Module, Pre-Wired
Manufacturer: TT Electronics/Optek Technology
Response Time: -


Features:

`.20" (5.08 mm) wide gap
`24" minimum, 26 AWG wire leads .86" (21.8 mm) deep slot
`Dust protection


Specifications

Stor age and Op er ating Tem per a ture Range . . . . . . . . . . . . . . . .-40 to +80
Input Di ode
For ward DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  50 mA
Peak For ward Cur rent (1 ms pulse width, 300 pps) . . . . . . . . . . . . . . . . . .  . 3.0 A
Re verse DC Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  100 mW⁽¹⁾
Output Phototransistor
Col lec tor-Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter-Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  5.0 V
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW⁽¹⁾


NOTES:
(1) De rate lin early 1.67 mW/ above 25.
(2) All pa ram e ters tested us ing pulse tech nique.
(3) Clear dust pro tection.


Description

The OPB816 consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. The deep slot allows for a longer reach of the optical center line from the mounting plane, .650" (16.51 mm).

Internal apertures of OPB816 are .010" x 0.06" for the phototransistor "S side" and .050" x .06" for the LED "E side".Custom electrical, wire or cabling is available. Contact your local representative or Optek for more information.
Absolute

Parameters:

Technical/Catalog Information	OPB816
Vendor	TT Electronics/Optek Technology
Category	Sensors, Transducers
Sensing Distance	0.200" (5.08mm)
Sensing Method	Transmissive
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	30mA
Current - DC Forward (If)	50mA
Output Configuration	Phototransistor
Response Time	-
Type	Unamplified
Mounting Type	Chassis Mount, Wire Lead
Package / Case	Pre-Leaded
Packaging	Bulk
Operating Temperature	-40°C ~ 85°C
Lead Free Status	Lead Free
RoHS Status	RoHS Non-Compliant
Other Names	OPB816 OPB816