Features: ` LOW NOISE: 100% Tested, 8nVHz max (10kHz)` LOW BIAS CURRENT: 1pA max` LOW OFFSET: 250mV max` LOW DRIFT: 1V/ max` HIGH OPEN-LOOP GAIN: 120dB min` HIGH COMMON-MODE REJECTION: 100dB minApplication` PRECISION INSTRUMENTATION` DATA ACQUISITION` TEST EQUIPMENT` OPTOELECTRONICS` MEDICAL EQUIP...
OPA111: Features: ` LOW NOISE: 100% Tested, 8nVHz max (10kHz)` LOW BIAS CURRENT: 1pA max` LOW OFFSET: 250mV max` LOW DRIFT: 1V/ max` HIGH OPEN-LOOP GAIN: 120dB min` HIGH COMMON-MODE REJECTION: 100dB minAppl...
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US $2.5 - 3.31 / Piece
Operational Amplifiers - Op Amps Precision Single Supply Dual
US $2.5 - 3.31 / Piece
Operational Amplifiers - Op Amps Precision Single Supply Dual
Supply .......................................................................................... ±18VDC
Internal Power Dissipation(1) ........................................................ 750mW
Differential Input Voltage(2) ......................................................... ±36VDC
Input Voltage Range(2) ................................................................ ±18VDC
Storage Temperature Range ............................................ 65 to +150
Operating Temperature Range ......................................... 55 to +125
Lead Temperature (soldering, 10s) .................................................. +300
Output Short Circuit Duration(3) ................................................ Continuous
Junction Temperature ....................................................................... +175
NOTES: (1) Packages must be derated based on JC = 150/W or JA = 300/W. (2) For supply voltages less than ±18VDC, the absolute maximum input voltage is equal to +18V > VIN > VCC 6V. See Figure 2. (3) Short circuit may be to power supply common only. Rating applies to +25 ambient. Observe dissipation limit and TJ.
The OPA111 is a precision monolithic dielectrically isolated FET (Difet ®) operational amplifier. Outstanding performance characteristics allow its use in the most critical instrumentation applications.
Noise, bias current, voltage offset, drift, open-loop gain, common-mode rejection, and power supply rejection
are superior to BIFET® amplifiers.
Very low bias current is obtained by dielectric isolation with on-chip guarding.
Laser trimming of thin-film resistors gives very low offset and drift. Extremely low noise is achieved with patented circuit design techniques. A new cascode design allows high precision input specifications and reduced susceptibility to flicker noise.
Standard 741 pin configuration allows upgrading of existing designs to higher performance levels.