OP999

Re verse Break down Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . .. 60 V
Storage and Op erating Tem perature Range . . . . . . .  -40 to +100
Lead Sol dering Tem perature (1/16 inch
[1.6 mm] from case for 5 sec. with soldering iron). . . . . .  . . . . 260⁽¹⁾
Power Dis sipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW⁽²⁾


Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/ above 25.
(3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890 nm and Ee(APT) of 0.25 mW/cm2.
(4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in the area of the leads.

The OP999 photodiode consists of a PIN silicon photodiode mounted in a dark blue plastic injection molded shell package. The narrow receiving angle provides excellent on-axis coupling. The snsors are 100% production tested for close correlation with Optek GaAlAs emitters.

Optek's packaging process provides excellent optical and mechanical axis alignment. The shell also provides excellent optical lens surface, control of chip placement, and consistency of the outside package dimensions.