OP910

Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 V
Stor age Tem per ature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150
Op er at ing Tem per ature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .  -65 to +125
Lead Sol der ing Tem per ature
[1/16 inch (1.6 mm) from case for 5 sec . with sol der ing iron] . . .  . . . . . . .  . 260⁽¹⁾
Power Dissaipa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW


NOTES:
(1) RMA Flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing.
(2) Light source is an un fil tered GaAIAs LED with a peak wave length of 885 nm and a radio met ric in ten sity level which var ies less than 10% over the en tire lens sur face of the pho to di ode being tested.
(3) Junc tion tem pera ture main tained at 25.
(4) To cal cu late typi cal dark cur rent in nA, use. The for mual ID = 10 (^0.042TA ^t-1.5) where TA is am bi ent tem pera ture in .
(5) Der ate line arly 2.5 mw/ above 25.

The OP910 consists of a PIN silicon photodiode mounted in a two-leaded hermetic TO-46 package. The narrow receiving angle has an acceptance half angle of ±12^o.