OP841W

The OP841W belongs to OP84(1 -5)W family which consists of an NPN silicon phototransistor mounted in a flat Tensed, hermetically sealed, TO-18 package. Except for minor differences in collector current ranges and minimum range binning only, this series is identical tc the OP800W series and is mechanically and spectrally matched to the OP130W and OP231W series of infrared emitting diodes. The Ease lead is bonded to enable conventicnal transistor biasing. The flat lens allows an acceptance half angle of 400 measured from the optical axis to the half power point.

The features of OP841W can be summarized as (1)collector currents specified as minimums; (2)rat tensed for wide acceptance angle; (3)TO-1B hermetically sealed package.

The absolute maximum ratings of OP841W are (1)collector-base voltage: 30V; (2)collector-emitter voltage: 30V; (3)emitter-basa voltage: 5.0 V; (4)emitter-collector voltage: 5.0V; (5)continuous collector current: 50mA; (6)storage temperature range: 50°C to +150°C; (7)operating temperature range: 65°C to +125°C; (8)lead soldering temperature [1/16 inch[1.6mm] from case for 5 sec. with soldering iron]: 2400C; (9)power dissipation: 250 mW.