OP830WSL

The OP830WSL consists of an NPN silicon photodarlington mounted in a hermetically sealed package. This photodarlington devices are normally used in applications where light signal levels are low and more current gain is needed than is possible with phototransistors. TO-18 packages offer high power dissipation and superior hostile environment operation. The wide receiving angle provides relatively even reception over a large area.

The features of OP830WSL can be summarized as (1)wide receiving angle; (2)enhanced temperature range; (3)excellent thermal characteristics; (4)TO-18 hermetically sealed package; (5)mechanically and spectrally matched to the OP130W and OP231 W series of infrared emitting diodes.

The absolute maximum ratings of OP830WSL are (1)collector-emitter voltage: 15.0V; (2)emitter-collector voltage: 5.0V; (3)storage/operating temperature range: -65°C to +150°C/ -55°C to +125°C; (4)lead soldering temperature [1/16 inch iron]: 260°C(1 RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.); (5)power dissipation: 250mW(2 derate linearly 2.5mW/°C above 25°C).