Photodetector Transistors Photo Transistor
OP800WSL: Photodetector Transistors Photo Transistor
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Maximum Power Dissipation : | 250 mW | Package / Case : | TO-46 |
The OP800WSL series device consists of an NPN silicon phototransistor mounted in a hermetically sealed package. TO-18 packages offer high power dissipation and superior hostile environment operation. And the wide receiving angle provides relatively even reception over a large area.
The features of OP800WSL can be summarized as (1)wide receiving angle; (2)variety of sensitivity ranges; (3)enhanced temperature range; (4)TO-18 hermetically sealed package; (5)mechanically and spectrally matched to the OP130W and OP231 W series emitters.
The absolute maximum ratings of OP800WSL are (1)collector-base voltage: 30 V; (2)collector-emitter voltage: 30 V; (3)emitterbase voltage: 5V; (4)emitter-collector voltage: 5V; (5)continuous collector current: 50 mA; (6)storage temperature range: -65°C to +150°C; (7)operating temperature range: -65°C to +125°C; (8)lead soldering temperature range [1/16 inch (1.6mm) 5 sec. with soldering iron]: 260°C; (9)power dissipation: 250 mW(derate linearly 2.5mW/°C above 25°C).
Technical/Catalog Information | OP800WSL |
Vendor | TT Electronics/Optek Technology |
Category | Sensors, Transducers |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 50mA |
Current - Dark (Id) (Max) | 100nA |
Power - Max | 250mW |
Orientation | Top View |
Mounting Type | Through Hole |
Package / Case | TO-18 |
Wavelength | 890nm |
Viewing Angle | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | OP800WSL OP800WSL |