OP750A

Collector- Emitter Volt age........................... 30 V
Emit ter Re verse Current...........................10 mA
Col lec tor DC Cur rent ............................ 30 mA
Stor age and Op er at ing Tem pera ture Range .......... -40 to +100
Lead Sol der ing Tem pera ture
[1/16 inch (1.6 mm) from case for 5 sec. with sol der ing iron]....... 260⁽¹⁾
Power Dis si pa tion ........................... 200 mW⁽²⁾


Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/ above 25.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50 A.

OP750A NPN silicon phototransistor molded in a clear epoxy package. The wide receiving angle provides relatively even reception over a large area. The sidelooking package is designed for easy PC board mounting of slotted optical switches or optical interrupt detectors. This OP750A series is mechanically and spectrally matched to the OP140 and OP240 series of infrared emitting diodes.

The phototransistor OP750A has an internal base-emitter resistor which provides protection from low level ambient lighting conditions. This feature is also useful when the media being detected is semi-transparent to infrared light in interruptive applications.