OP599

Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Continuous Col lector Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage and Op erating Tem perature Range . . . . . . . . . . . . . . . . .  -40 to +100
Lead Sol dering Tem perature (1/16 inch [1.6 mm] from case for 5 sec. with
soldering iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  260 ⁽¹⁾
Power Dis sipatio. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW⁽²⁾


Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/o C above 25o C.
(3) VCE = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of 890 nm and Ee(APT) of .25 mW/cm2.
(4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in the area of the leads.

The OP599 series phototransistor consists of an NPN silicon phototransistor mounted in a dark blue plastic injection molded shell package. The narrow receiving angle provides excllent on-axis coupling. The sensors are 100% production tested for close correlation with Optek GaAlAs emitters.

Optek's packaging process provides excellent optical and mechanical axis  alignment. The shell also provides excellent optical lens surface, control of chip placement, and consistency of the outside package dimensions.