Photodetector Transistors Photo Transistor
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Maximum Power Dissipation : | 100 mW | Package / Case : | T-1 |
The OP505W consists of an NPN silicon phototransistor molded in a blue tinted plastic package and this device is 100% production tested using infrared light for close correlation with Optek's GaAs and GaAIAs emitters. The wide receiving angle provides relatively even reception over a large area.
The features of OP505W can be summarized as (1)wide receiving angle; (2)T-1 package style; (3)small package size for space limited applications.
The absolute maximum ratings of OP505W are (1)collector-emitter voltage: 30V; (2)emitter-collector voltage: 5.0V; (3)storage and operating temperature range: -40°C to +100°C; (4)lead soldering temperature [1/16 inch iron]: 260°C(1 RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering.); (5)power dissipation: 100mW(2 derate linearly 1.33mW/°C above 25°C).
Technical/Catalog Information | OP505W |
Vendor | TT Electronics/Optek Technology |
Category | Sensors, Transducers |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 100A |
Current - Dark (Id) (Max) | 100nA |
Power - Max | 100mW |
Orientation | Top View |
Mounting Type | Through Hole |
Package / Case | T-1 |
Wavelength | 935nm |
Viewing Angle | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | OP505W OP505W |