OP400RPFB

PinoutDescriptionThe OP400RPFB monolithic quad operational amplifier microcircuit features a greater than 100 krad (Si) typical total dose tolerance, depending upon space mission. The features of OP400RPFB are: (1)RAD-PAK?technology-hardened against natural space radiation; (2)Total dose hardness:...

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SeekIC No. : 004437986 Detail

OP400RPFB: PinoutDescriptionThe OP400RPFB monolithic quad operational amplifier microcircuit features a greater than 100 krad (Si) typical total dose tolerance, depending upon space mission. The features of OP...

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Part Number:
OP400RPFB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Description

The OP400RPFB monolithic quad operational amplifier microcircuit features a greater than 100 krad (Si) typical total dose tolerance, depending upon space mission. The features of OP400RPFB are: (1)RAD-PAK?technology-hardened against natural space radiation; (2)Total dose hardness: > 100 krad (Si), depending upon space mission; (3)Package:16 pin Rad-Pak flat package; (4)Low input offset voltage 150V max; (5)Low offset voltage drift +1.2V/ max (over -55 to +125); (6)Low supply current (per amplifier) 725 A max; (7)High open-loop gain 5000V/mV min.

The following is about the absolute maximum ratings of OP400RPFB: (1)Supply Voltage: ±20 V; (2)Differential Input Voltage: ±30 V; (3)Input Voltage: Supply Voltage; (4)Output Short-Circuit Duration: Continuous; (5)Storage Temperature Range: -65 to 150 °C; (6)Operating Temperature Range: -55 to 125 °C.

The electrical characteristics of the OP400RPFB are: (1)Input Offset Voltage: 40 V typ and 150 V max at +25°C; (2)Long Term Input Voltage Stability: 0.1 V/mo; (3)Input Offset Current: 0.1nA typ and 1.0nA max at VCM = 0V, +25°C; (4)Input Bias Current: 0.75 to 3.0 nA at VCM = 0V, +25°C; (5)Input Resistance Differential Mode: 10G at +25°C, +25E = Engineering(testing@ +25°C); (6)Input Resistance Common Mode: 200 G; (7)Large Signal Voltage Gain: 5000V/mV min and 12000V/mV typ at VO = ±10V, RL = 10k.




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