ON2253

The ONZ2253 is the same with CNZ2253 which is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si Darlington phototransistor is used as the light detecting element. And the two elements are located parallel in the same direction and objects are detected when passing in front of the device. It can be applited in detection of paper, film and cloth, optical mark reading, detection of position and edge, detection of coin and bill, start, end mark detection of magnetic tape.

The features of ONZ2253 can be summarized as (1)high sensitivity; (2)small size and light weight.

The absolute maximum ratings of ONZ2253 are (1)input (light emitting diode) reverse voltage VR: 3 V/forward current IF: 50mA/power dissipation *1( input power derating ratio is 1.0mW/°C at Ta 25°C.) PD: 75mW; (2)output (photo transistor) collector-emitter voltage(base open) VCEO: 20 V/emitter-collector voltage(base open) VECO: 5V/collector current IC: 30 mA; (3)Collector power dissipation *2( output power derating ratio is 1.34mW/°C at Ta 25°C) PC: 100 mW; (4)temperature operating ambient temperature Topr: -25 to +85 °C/storage temperature T stg: -30 to +100°C.