ON2173

The ON2173 is the same with CNB1009 which is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. And the two elements are located parallel in the same direction and objects are detected when passing in front of the device.

The features of ON2173 can be summarized as (1)fast response : tr , tf = 6 s (typ.); (2)small size, light weight.

The absolute maximum ratings of ON2173 are (1)input (light emitting diode) reverse voltage VR: 3 V/forward current IF: 50mA/power dissipation *1( input power derating ratio is 1.0mW/°C at Ta 25°C.) PD: 75mW; (2)output (photo transistor) collector-emitter voltage(base open) VCEO: 20 V/emitter-collector voltage(base open) VECO: 5V/collector current IC: 30 mA; (3)collector power dissipation *2( output power derating ratio is 1.34mW/°C at Ta 25°C) PC: 100 mW; (4)temperature operating ambient temperature Topr: -25 to +85 °C/storage temperature T stg: -30 to +100°C.