ON1120

The ON1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element,and a high sensitivity phototransistor is used as the light detecting element.

Features of the ON1120 are:(1)wide gap between emitting and detecting elements, suitable for thick plate detection Gap: 10 mm;(2)fast response: tr , tf = 6 s (typ.);(3)the external case is molded using visible light cutoff resin. The case has no openings, so the photosensor is not easily susceptible to output attenuation resulting from dust or particles.

The absolute maximum ratings of the ON1120 can be summarized as:(1):the parameter is input (light emitting diode) reverse voltage,the symbol is VR,the rating is 3,the unit is V;(2):the parameter is input (light emitting diode) forward current,the symbol is IF,the rating is 50,the unit is mA;(3):the parameter is input (light emitting diode) power dissipation,the symbol is PD,the rating is 75,the unit is mW;(4):the parameter is output (photo transistor) collector current,the symbol is Ic,the rating is 20,the unit is mA;(5):the parameter is output (photo transistor) collector to emitter voltage,the symbol is VCEO,the rating is 20,the unit is V;(6):the parameter is output (photo transistor) emitter to collector voltage,the symbol is VECO,the rating is 5,the unit is V;(7):the parameter is output (photo transistor) collector power dissipation,the symbol is PC,the rating is 100,the unit is mW;(8):the parameter is operating ambient temperature,the symbol is Topr,the rating is -5 to +60,the unit is ;(9):the parameter is storage temperature,the symbol is Tstg,the rating is -15 to +65,the unit is .