ON1003

The ON1003 is designed as an ultraminiature, highly reliable transmittive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.

ON1003 has four features. (1)Ultraminiature: 4.2x4.2mm (height 5.2mm). (2)Fast response tT, tf=35us typ. (3)Highly precise position detection 0.15mm. (4)Gap width 1.2mm. Those are all the main features.

Some absolute maximum ratings of ON1003 have been concluded into several points as follow. (1)Its input (light emitting diode) reverse voltage would be 6V. (2)Its input (light emitting diode) forward current DC would be 50mA. (3)Its input (light emitting diode) power dissipation would be 75mW. (4)Its output (photo transistor) collector current would be 20mA. (5)Its output (photo transistor) collector to emitter voltage would be 35V. (6)Its output (photo transistor) emitter to collector voltage would be 6V. (7)Its output (photo transistor) collector power dissipation would be 75mW. (8)Its operating ambient temperature range would be from -25°C to 85°C. (9)Its storage temperature range would be from -40°C to 100°C. (10)Its soldering temperature would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of ON1003 are concluded as follow. (1)Its input forward voltage DC would be typ 1.2V and max 1.4V. (2)Its input reverse current DC would be max 10uA. (3)Its output collector cutoff current would be max 100nA. (4)Its transfer collector current would be min 100uA and max 1300uA. (5)Its transfer collector to emitter saturation voltage would be max 0.4V. (6)Its transfer response time would be typ 35us. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!