OM6218SP1

The OM6218SP1 series of high current, low RDS(ON)MOSFETs are ideally suited for low voltage applications;battery power,low voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simplify drive circuitry. OM6218SP1 has five unique features: the first one is two uncommitted MOSFETs in one package. The second one is isolated low profile package. The third one is low RDS(on).The forth one is low conductive loss/low gate charge. The last one is high current/fast switching times.

There are some electrical characteristics about OM6218SP1. Drain-source breakdown(BVDSS) is 60 V min when VGS is 0 and ID is 250 uA.Gate-threshold voltage(VGS(th)) is 2.0 V min and 4.0 V max when VDS is equal to VGS and ID is 1 mA . On-state drain current(ID(on)) is 30 a min when VDS is not smaller than 10 v and VGS is 10 V. Static drain-source on-state resistance(RDS(on)) is .023 ohm typ and .030 ohm max when VGS is 10 V , ID is 30 A and Tc is 125.

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