OLH300

Features: Electrical parameters guaranteed over -55°C to +125°C ambient temp. range1000 Vdc electrical isolationHigh-Speed, 1 Mbit/s typicalOpen collector output300 Khz bandwidthTO - 5 hermetic packageSimilar to 6N135/136, 4N55Radiation tolerant100% hi-rel screening are offeredSpecifications ...

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SeekIC No. : 004437465 Detail

OLH300: Features: Electrical parameters guaranteed over -55°C to +125°C ambient temp. range1000 Vdc electrical isolationHigh-Speed, 1 Mbit/s typicalOpen collector output300 Khz bandwidthTO - 5 hermetic pack...

floor Price/Ceiling Price

Part Number:
OLH300
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

 Electrical parameters guaranteed over     -55°C to +125°C ambient temp. range
 1000 Vdc electrical isolation
 High-Speed, 1 Mbit/s typical
 Open collector output
 300 Khz bandwidth
 TO - 5 hermetic package
 Similar to 6N135/136, 4N55
 Radiation tolerant
 100% hi-rel screening are offered



Specifications

Couple  
Input to Output Isolation Voltage 1 ± 1000 Vdc
Storage Temperature Range -65°C to +150°C
Operation Temperature Range -55°C to +125°C
Lead Temperature 1.6 mm from case for 10 sec. 240°C
   
Input Diode  
Average Input Current 20 mA
Peak Forward Current (1mS duration ) 40 mA
Reverse Voltage 5.0 V
Power Dissipation 36 mW
   
Output Detector  
Average Output Current 8 mA
Peak Output Current 16 mA
Supply Voltage, Vcc -0.5 V to 18 V
Output Voltage, Vout -0.5 V to 18 V
Power Dissipation 50 mW



Description

The OLH300 is suitable for interfacing TTL to LSTTL, TTL or CMOS as well as wide bandwidth analog applications. Each OLH300 has a light emitting diode and an integrated photodiode
transistor detector mounted and coupled in a ceramic substrate inside a hermetic TO-5 package providing 1000 Vdc electrical isolation between input and output. The OLH300 improves switching speed by orders of magnitude as compared to standard photo transistors, by reducing the base to collector capacitance. The internal shield provides excellent common-mode immunity performance.


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