OLF300

Features: Hermetic SMT packageElectrical parameters guaranteed over -55°C to +125°C ambient temp. range1000 Vdc electrical isolationHigh-Speed, 1 Mbit/s typicalOpen collector output300 Khz bandwidthSimilar to 6N135/136, 4N55Radiation tolerant100% hi-rel screenings are offeredSpecifications Co...

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OLF300 Picture
SeekIC No. : 004437464 Detail

OLF300: Features: Hermetic SMT packageElectrical parameters guaranteed over -55°C to +125°C ambient temp. range1000 Vdc electrical isolationHigh-Speed, 1 Mbit/s typicalOpen collector output300 Khz bandwidth...

floor Price/Ceiling Price

Part Number:
OLF300
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/5

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Product Details

Description



Features:

 Hermetic SMT package
 Electrical parameters guaranteed over -55°C to +125°C ambient temp. range
 1000 Vdc electrical isolation
 High-Speed, 1 Mbit/s typical
 Open collector output
 300 Khz bandwidth
 Similar to 6N135/136, 4N55
 Radiation tolerant
 100% hi-rel screenings are offered



Specifications

Coupled  
Input to Output Isolation Voltage 1 ± 1000 Vdc
Storage Temperature Range -65°C to +150°C
Operation Temperature Range -55°C to +125°C
Lead Temperature 1.6 mm from case for 10 sec. 240°C
   
Input Diode  
Average Input Current 20 mA
Peak Forward Current ( 1mS duration ) 40 mA
Reverse Voltage 5.0 V
Power Dissipation 36 mW
   
Output Detector  
Average Output Current 8 mA
Peak Output Current 16 mA
Supply Voltage, Vcc -0.5 V to 18 V
Output Voltage, Vout -0.5 V to 18 V
Power Dissipation 50 mW



Description

The OLF300 is suitable for interfacing TTL to LSTTL, TTL or CMOS as well as wide bandwidth analog applications. Each OLF300 has a light emitting diode and an integrated photo-diode transistor detector mounted and coupled in a custom 8-pin hermetic flat pack package providing 1000 Vdc electrical isolation between input and output. The integrated photo-diode transistor improves switching speed by orders of magnitude as compared to standard photo transistors, by reducing the base to collector capacitance. The internal shield provides excellent common-mode immunity performance.


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