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NX6508GH

Features: • OPTICAL OUTPUT POWER PO = 5.0 mW• PEAK EMISSION WAVELENGTH p = 1 470 to 1 610 nm (Based on ITU-T recommendations)• LOW THRESHOLD CURRENT Ith = 10 mA• HIGH SPEED tr = 100 ps MAX• SIDE MODE SUPPRESSION RATIO SMSR = 40 dB• OPERATING CASE TEMPERATURE RAN...

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NX6508GH: Features: • OPTICAL OUTPUT POWER PO = 5.0 mW• PEAK EMISSION WAVELENGTH p = 1 470 to 1 610 nm (Based on ITU-T recommendations)• LOW THRESHOLD CURRENT Ith = 10 mA• HIGH SPEED t...

NX6508GH Data Sheet

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Part Number:
NX6508GH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• OPTICAL OUTPUT POWER PO = 5.0 mW
• PEAK EMISSION WAVELENGTH p = 1 470 to 1 610 nm (Based on ITU-T recommendations)
• LOW THRESHOLD CURRENT Ith = 10 mA
• HIGH SPEED tr = 100 ps MAX
• SIDE MODE SUPPRESSION RATIO SMSR = 40 dB
• OPERATING CASE TEMPERATURE RANGE TC = -20 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE Ø5.6 mm
• BASED ON TELCORDIA RELIABILITY


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
RATINGS
UNIT
Po
Optical Output Power
10
mW
IF
Forward Current of LD
150
mA
VR
Reverse Voltage of LD
2.0
V
IF
Forward Current of PD
2.0
mA
VR
Reverse Voltage of PD
 15 V
TC
Operating Case Temperature
 −20 to +85 °C
Tstg
Storage Temperature
 −40 to +85 °C
Tsld
Lead Soldering Temperature
 350 (3 sec.) °C
RH
Relative Humidity (noncondensing)
 85 %



Description

NEC's NX6508GH Series are 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. These devices are ideal for 2.5 Gb/s CWDM application.


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