NTZS3151PT5G

MOSFET -20V -950mA P-Channel

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NTZS3151PT5G: MOSFET -20V -950mA P-Channel

floor Price/Ceiling Price

Part Number:
NTZS3151PT5G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.86 A
Resistance Drain-Source RDS (on) : 150 mOhms at 4.5 V Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-563 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Package / Case : SOT-563
Continuous Drain Current : 0.86 A
Resistance Drain-Source RDS (on) : 150 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTZS3151PT5G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C860mA
Rds On (Max) @ Id, Vgs150 mOhm @ 950mA, 4.5V
Input Capacitance (Ciss) @ Vds 458pF @ 16V
Power - Max170mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.6nC @ 4.5V
Package / CaseSOT-563
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTZS3151PT5G
NTZS3151PT5G



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