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SeekIC No. : 00159964 Detail

NTZS3151PT5G: MOSFET -20V -950mA P-Channel

NTZS3151PT5G Data Sheet

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Part Number:: NTZS3151PT5G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	0.86 A
Resistance Drain-Source RDS (on) :	150 mOhms at 4.5 V	Configuration :	Single Quad Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-563	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Package / Case : SOT-563
Continuous Drain Current : 0.86 A
Resistance Drain-Source RDS (on) : 150 mOhms at 4.5 V

Parameters:

Technical/Catalog Information	NTZS3151PT5G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	860mA
Rds On (Max) @ Id, Vgs	150 mOhm @ 950mA, 4.5V
Input Capacitance (Ciss) @ Vds	458pF @ 16V
Power - Max	170mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5.6nC @ 4.5V
Package / Case	SOT-563
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTZS3151PT5G NTZS3151PT5G

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