Features: SpecificationsDescription The PNP Low Saturation Transistor NTZ660is designed with high current gain and low saturation voltage with collector currents up to 3A continuous about the PNP Low Saturation Transistor Here are some absolute maximum ratings about the PNP Low Saturation Transis...
NTZ660: Features: SpecificationsDescription The PNP Low Saturation Transistor NTZ660is designed with high current gain and low saturation voltage with collector currents up to 3A continuous about the PNP Lo...
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The PNP Low Saturation Transistor NTZ660 is designed with high current gain and low saturation voltage with collector currents up to 3A continuous about the PNP Low Saturation Transistor
Here are some absolute maximum ratings about the PNP Low Saturation Transistor NTZ660, which are limiting values above which the serviceability of any semiconductor device may be impaired. The collector-emitter voltage is 60V for both of NZT660 and NZT660A.The collector-base voltage is 80V for NZT660 and 60V for NZT660A, respectively. The emitter-base voltage is 5V for both of NZT660 and NZT660A. The collector current-continuous of NTZ660 is 3A for both of NZT660 and NZT660A.The operating and storage junction temperature range is from -55 to 150 for both of NZT660 and NZT660A.
There are also some notes about NTZ660. These absolute maximum ratings are based on a maximum junction temperature of 150.And these are steady state limits. The factory should be consulted on application involving pulsed or low duty cycle operations.