MOSFET -30V -2.48A P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.75 A | ||
Resistance Drain-Source RDS (on) : | 85 mOhms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Micro | Packaging : | Reel |
Technical/Catalog Information | NTTS2P03R2G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.1A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 2.48A, 10V |
Input Capacitance (Ciss) @ Vds | 500pF @ 24V |
Power - Max | 600mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 22nC @ 4.5V |
Package / Case | 8-MSOP, Micro8?, 8-uMAX, 8-uSOP, |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTTS2P03R2G NTTS2P03R2G NTTS2P03R2GOSCT ND NTTS2P03R2GOSCTND NTTS2P03R2GOSCT |