Features: `Peak pulse current : IPP = 10 A max(5 / 310 s)`Clamping voltage : VCL = 3 V max`Low leakage current : IR = 1 A`Capacitance: C = 40 pF typ.ApplicationISDN equipment where transient overvoltage and electrostaticdischargeprotection isrequired,suchas: · interface on NT equipment· interface ...
NTSP1: Features: `Peak pulse current : IPP = 10 A max(5 / 310 s)`Clamping voltage : VCL = 3 V max`Low leakage current : IR = 1 A`Capacitance: C = 40 pF typ.ApplicationISDN equipment where transient overvol...
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`Peak pulse current : IPP = 10 A max(5 / 310 s)
`Clamping voltage : VCL = 3 V max
`Low leakage current : IR = 1 A
`Capacitance: C = 40 pF typ.
ISDN equipment where transient overvoltage and electrostaticdischargeprotection isrequired,suchas:
· interface on NT equipment
· interface of terminal equipment
Symbol |
Parameter |
Test condition |
Value |
Unit |
IPP |
Peak pulse current |
1 kV 10/700s (see test circuit) |
10 |
A |
2 kV 1.2/50s (see test circuit) |
20 | |||
Tstg |
Storage temperature range |
-40 to +150 |
°C | |
TL |
Lead temperature for soldering during 10 s |
260 |
°C |
The NTSP1 is a monolithic diode structure especially designed to protect ISDNS/T interfaces against transient overvoltage and ESD surges.