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NTS2101PT1

MOSFET -8V -1.4A P-Channel

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SeekIC No. : 00165946 Detail

NTS2101PT1: MOSFET -8V -1.4A P-Channel

NTS2101PT1 Data Sheet

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Part Number:
NTS2101PT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 8 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 8 V
Package / Case : SC-70
Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTS2101PT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25° C1.4A
Rds On (Max) @ Id, Vgs100 mOhm @ 1A, 4.5V
Input Capacitance (Ciss) @ Vds 640pF @ 8V
Power - Max290mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.4nC @ 5V
Package / CaseSC-70-3, SOT-323-3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTS2101PT1
NTS2101PT1



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