MOSFET -8V 3.7A P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 8 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 3.7 A | ||
Resistance Drain-Source RDS (on) : | 52 mOhms at 4.5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Technical/Catalog Information | NTR2101PT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25° C | 3.7A |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 3.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1173pF @ 4V |
Power - Max | 960mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTR2101PT1G NTR2101PT1G NTR2101PT1GOSCT ND NTR2101PT1GOSCTND NTR2101PT1GOSCT |