NTP75N06

MOSFET 60V 75A N-Channel

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SeekIC No. : 00165674 Detail

NTP75N06: MOSFET 60V 75A N-Channel

floor Price/Ceiling Price

Part Number:
NTP75N06
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 9.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 9.5 mOhms
Continuous Drain Current : 75 A


Features:

• Pb−Free Packages are Available


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits



Specifications

 Rating  Symbol  Value  Unit
 Drain−to−Source Voltage  VDSS  60  Vdc
 Drain−to−Gate Voltage (RGS = 10 M)  VDGR  60  Vdc
 Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms)
VGS
VGS
±20
±30
 Vdc
 Drain Current
− Continuous @ TA = 25
− Continuous @ TA = 100
− Single Pulse (tp10 µs)
 ID
ID
IDM
 75
50
255
 Adc
Apk
 Total Power Dissipation @ TA = 25
Derate above 25
Total Power Dissipation @ TA = 25(Note 1)
 PD 214
1.4
2.4
 W
W/
W
 Operating and Storage Temperature Range  TJ, Tstg  −55 to
+175
 
 Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 75 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 55 A, VDS = 60 Vdc)
 EAS  884  mJ
 Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
 RJC
RJA
0.7
62.5
 /W
 Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
 TL  260  

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.




Parameters:

Technical/Catalog InformationNTP75N06
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs9.5 mOhm @ 37.5A, 10V
Input Capacitance (Ciss) @ Vds 4510pF @ 25V
Power - Max214W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP75N06
NTP75N06
NTP75N06OS ND
NTP75N06OSND
NTP75N06OS



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