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NTP75N03-06

Features: • Ultra−Low RDS(on), Single Base, Advanced Technology• SPICE Parameters Available• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperatures• High Avalanche Energy Capability• ESD JEDAC Rated HBM Class...

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SeekIC No. : 004436690 Detail

NTP75N03-06: Features: • Ultra−Low RDS(on), Single Base, Advanced Technology• SPICE Parameters Available• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specifi...

NTP75N03-06 Data Sheet

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Part Number:
NTP75N03-06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Ultra−Low RDS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Capability
• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0


Application

• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTP1306 and MTB1306


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Drain−to−Gate Voltage (RGS = 10 M)
VDGB
30
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Non−repetitive (tp 10 ms)
VGS
±24
Vdc
Drain Current
− Continuous @ TC = 25
− Continuous @ TC = 100
− Single Pulse (tp10 s)

ID
ID
IDM

75
59
225
Adc

Apk
Total Power Dissipation @ TC = 25
Derate above 25
Total Power Dissipation @ TA = 25°C (Note 1)
PD
125
1.0
2.5
W
W/
W
Operating and Storage Temperature Range
TJ and Tstg
−55 to +150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH
IL(pk) = 55 A, VDS = 40 Vdc)
EAS
1500
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)

RJC
RJA
RJA

1.0
62.5
50
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
1. When surface mounted to an FR4 board using the minimum recommended pad size.


Description

This 20 VGS gate drive vertical Power MOSFET NTP75N03-06 is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET NTP75N03-06 is designed to withstand high energy in the avalanche and commutation modes. The Drain−to−Source Diode has a fast response with soft recovery.




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