NTP60N06L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 16 mOhms at 5 V


Features:

• Pb−Free Packages are Available


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits


Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	60	Vdc
Drain−to−Gate Voltage (RGS = 10 M )	VDGR	60	Vdc
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms)	V GS V GS	±15 ±20	Vdc
Drain Current − Continuous @ TA = 25°C − Continuous @ TA 100°C − Single Pulse (tp10 s)	I D I D I DM	60 42.3 180	Adc Apk
Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1)	PD	150 1.0 2.4	W W/°C W
Operating and Storage Temperature Range	TJ, Tstg	−55 to 175	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 75 Vdc, VGS = 5.0 Vdc, L = 0.3 mH, I L(pk) = 55 A,VDS = 60 Vdc)	EAS	454	mJ
Thermal Resistance, − Junction−to−Case − Junction−to−Ambient (Note 1)	RJC RJA	1.0 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds	TL	260	°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ²).

Description

 NTP60N06L Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.

Parameters:

Technical/Catalog Information	NTP60N06L
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	16 mOhm @ 30A, 5V
Input Capacitance (Ciss) @ Vds	3075pF @ 25V
Power - Max	2.4W
Packaging	Tube
Gate Charge (Qg) @ Vgs	65nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTP60N06L NTP60N06L NTP60N06LOS ND NTP60N06LOSND NTP60N06LOS