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NTP4302

MOSFET 30V 74A N-Channel

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SeekIC No. : 00166810 Detail

NTP4302: MOSFET 30V 74A N-Channel

NTP4302 Data Sheet

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Part Number:
NTP4302
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 74 A
Resistance Drain-Source RDS (on) : 9.3 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 74 A
Resistance Drain-Source RDS (on) : 9.3 mOhms


Features:

• Low RDS(on)
• Higher Efficiency Extending Battery Life
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS Specified at Elevated Temperature


Application

• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery Powered Products: Ie:
   Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Drain−to−Gate Voltage (RGS = 10 M)
VDGR
30
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Drain Current
− Continuous @ TC = 25
− Continuous @ TC = 100
− Single Pulse (tp10 s)

ID
ID
IDM

74
47
175
Adc

Apk
Total Power Dissipation @ TC = 25
Derate above 25
PD
80
0.66
W
W/
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 30 Vdc, VGS = 10 Vdc, L = 5.0 mH
IL(pk) = 17 A, VDS = 30 Vdc, RG = 25 )
EAS
722
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)

RJC
RJA
1.55
70
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
1. When surface mounted to an FR4 Board using minimum recommended Pad Size, (Cu Area 0.412 in2).
2. Current limited by internal lead wires.


Parameters:

Technical/Catalog InformationNTP4302
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C74A
Rds On (Max) @ Id, Vgs9.3 mOhm @ 37A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 24V
Power - Max80W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP4302
NTP4302
NTP4302OS ND
NTP4302OSND
NTP4302OS



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