MOSFET 200V 30A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 81 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | NTP30N20G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 30A |
Rds On (Max) @ Id, Vgs | 81 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 2335pF @ 25V |
Power - Max | 214W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 100nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTP30N20G NTP30N20G NTP30N20GOS ND NTP30N20GOSND NTP30N20GOS |