NTP22N06L

MOSFET N-CH 60V 22A TO220AB

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SeekIC No. : 003433827 Detail

NTP22N06L: MOSFET N-CH 60V 22A TO220AB

floor Price/Ceiling Price

Part Number:
NTP22N06L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 22A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 65 mOhm @ 11A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 20nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 690pF @ 25V
Power - Max: 60W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) @ Vgs: 20nC @ 5V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 22A
Power - Max: 60W
Manufacturer: ON Semiconductor
Input Capacitance (Ciss) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 65 mOhm @ 11A, 5V


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits



Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 10 M )
VDGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp10 ms)
VGS
VGS
±10
±20
Vdc
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tp10 ms)
I D
ID
IDM
22
10
66
Adc
Apk
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
60
0.4
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
+175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 1.0 mH
I L(pk) = 12 A, VDS = 60 Vdc, RG = 25 )
EAS
72
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
RJC
RJA
2.5
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
°C



Description

 NTP22N06L Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.




Parameters:

Technical/Catalog InformationNTP22N06L
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs65 mOhm @ 11A, 5V
Input Capacitance (Ciss) @ Vds 690pF @ 25V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP22N06L
NTP22N06L
NTP22N06LOS ND
NTP22N06LOSND
NTP22N06LOS



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