NTLJS1102PTAG Selling Leads, Price trend , ON Semiconductor, NTLJS1102PTAG DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00160987 Detail

NTLJS1102PTAG: MOSFET PFET WDFN6 8V 8.1A 36mOhm

NTLJS1102PTAG Data Sheet

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Part Number:: NTLJS1102PTAG
Mfg:: ON Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	8 V
Gate-Source Breakdown Voltage :	+/- 6 V	Continuous Drain Current :	8.1 A
Resistance Drain-Source RDS (on) :	36 mOhms at 4.5 V	Configuration :	Single Quad Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	WDFN	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 8 V
Configuration : Single Quad Drain
Continuous Drain Current : 8.1 A
Gate-Source Breakdown Voltage : +/- 6 V
Package / Case : WDFN
Resistance Drain-Source RDS (on) : 36 mOhms at 4.5 V

Parameters:

Technical/Catalog Information	NTLJS1102PTAG
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25° C	3.7A
Rds On (Max) @ Id, Vgs	36 mOhm @ 6.2A, 4.5V
Input Capacitance (Ciss) @ Vds	1585pF @ 4V
Power - Max	700mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	25nC @ 4.5V
Package / Case	6-WDFN
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTLJS1102PTAG NTLJS1102PTAG

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