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NTLJF3117PTAG

MOSFET PFET 20V 4.1A 106MO 2X2

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SeekIC No. : 00162762 Detail

NTLJF3117PTAG: MOSFET PFET 20V 4.1A 106MO 2X2

NTLJF3117PTAG Data Sheet

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Part Number:
NTLJF3117PTAG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : WDFN Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V
Continuous Drain Current : 3.3 A
Package / Case : WDFN


Parameters:

Technical/Catalog InformationNTLJF3117PTAG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.3A
Rds On (Max) @ Id, Vgs100 mOhm @ 2A, 4.5V
Input Capacitance (Ciss) @ Vds 531pF @ 10V
Power - Max710mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.2nC @ 4.5V
Package / Case6-WDFN
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTLJF3117PTAG
NTLJF3117PTAG



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