NTHS5443T1G

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3.6 A
Configuration : Single Hex Drain
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V


Parameters:

Technical/Catalog Information	NTHS5443T1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	65 mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 4.5V
Package / Case	8-ChipFET?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTHS5443T1G NTHS5443T1G NTHS5443T1GOSTR ND NTHS5443T1GOSTRND NTHS5443T1GOSTR