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NTHS5443T1

MOSFET -20V -4.9A P-Channel

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SeekIC No. : 00162337 Detail

NTHS5443T1: MOSFET -20V -4.9A P-Channel

NTHS5443T1 Data Sheet

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Part Number:
NTHS5443T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V Configuration : Single Hex Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 3.6 A
Configuration : Single Hex Drain
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHS5443T1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.6A
Rds On (Max) @ Id, Vgs65 mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Package / CaseChipFET
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTHS5443T1
NTHS5443T1
NTHS5443T1OS ND
NTHS5443T1OSND
NTHS5443T1OS



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