NTHS5402T1

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 4.9A
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Power - Max: 1.3W
Package / Case: 8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
Manufacturer: ON Semiconductor
Supplier Device Package: ChipFET?


Parameters:

Technical/Catalog Information	NTHS5402T1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4.9A
Rds On (Max) @ Id, Vgs	35 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	8-ChipFET?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTHS5402T1 NTHS5402T1 NTHS5402T1OS ND NTHS5402T1OSND NTHS5402T1OS