NTHS4111PT1G

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 700mW
Package / Case: 8-SMD, Flat Lead
Current - Continuous Drain (Id) @ 25° C: 3.3A
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Packaging: Cut Tape (CT)
Manufacturer: ON Semiconductor
Supplier Device Package: ChipFET?
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 10V
Input Capacitance (Ciss) @ Vds: 1500pF @ 24V


Parameters:

Technical/Catalog Information	NTHS4111PT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.3A
Rds On (Max) @ Id, Vgs	45 mOhm @ 4.4A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 24V
Power - Max	700mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	28nC @ 10V
Package / Case	8-ChipFET?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTHS4111PT1G NTHS4111PT1G NTHS4111PT1GOSCT ND NTHS4111PT1GOSCTND NTHS4111PT1GOSCT